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1 features ? fast read access time - 150 ns ? fast byte write - 200 s or 1 ms ? self-timed byte write cycle C internal address and data latches C internal control timer C automatic clear before write ? direct microprocessor control Cdata polling ? low power C 30 ma active current C100 a cmos standby current ? high reliability C endurance: 10 4 or 10 5 cycles C data retention: 10 years ? 5v 10% supply ? cmos & ttl compatible inputs and outputs ? jedec approved byte wide pinout ? commercial , industrial and military temperature ranges description the f t28c16 is a low-power, high-performance electrically erasable and program- mable read only memory with easy to use features. the f t28c16 is a 16k memory organized as 2,048 words by 8 bits. the device is manufactured with reliable atmel die. 16k (2k x 8) parallel eeproms ft28c16 rev. 0540bC10/98 pin configurations pin name function a0 - a10 addresses ce chip enable oe output enable we write enable i/o0 - i/o7 data inputs/outputs nc no connect dc dont connect cdil ,/fp to p v i e w 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 a7 a6 a5 a4 a3 a2 a1 a0 i/o0 i/o1 i/o2 gnd vcc a8 a9 we oe a10 ce i/o7 i/o6 i/o5 i/o4 i/o3 lcc/"j"lcc to p v i e w note: plcc package pins 1 and 17 are dont connect. 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 a6 a5 a4 a3 a2 a1 a0 nc i/o0 a8 a9 nc nc oe a10 ce i/o7 i/o6 4 3 2 1 32 31 30 14 15 16 17 18 19 20 i/o1 i/o2 gnd dc i/o3 i/o4 i/o5 a7 nc nc dc vcc we nc (continued)
f t28c16 2 the f t28c16 is accessed like a static ram for the read or write cycles without the need of external components. dur- ing a byte write, the address and data are latched inter- nally, freeing the microprocessor address and data bus for other operations. following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. the end of a write cycle can be determined by data polling of i/o 7. once the end of a write cycle has been detected, a new access for a read or a write can begin. the cmos technology offers fast access times of 150 ns at low power dissipation. when the chip is deselected the standby current is less than 100 m a. force' s 28c16 has additional features to ensure high qual- ity and manufacturability. the device utilizes error correc- tion internally for extended endurance and for improved data retention characteristics. an extra 32 bytes of eeprom are available for device identification or tracking. block diagram absolute maximum ratings* temperature under bias................................ -55c to +125c *notice: stresses beyond those listed under absolute maximum ratings may cause permanent dam- age to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability storage temperature ..................................... -65c to +150c all input voltages (including nc pins) with respect to ground ...................................-0.6v to +6.25v all output voltages with respect to ground .............................-0.6v to v cc + 0.6v voltage on oe and a9 with respect to ground ...................................-0.6v to +13.5v
f t28c16 3 device operation read: the f t28c16 is accessed like a static ram. when ce and oe are low and we is high, the data stored at the memory location determined by the address pins is asserted on the outputs. the outputs are put in a high impedance state whenever ce or oe is high. this dual line control gives designers increased flexibility in preventing bus contention. byte write: writing data into the f t28c16 is similar to writing into a static ram. a low pulse on the we or ce input with oe high and ce or we low (respectively) ini- tiates a byte write. the address location is latched on the last falling edge of we (or ce ); the new data is latched on the first rising edge. internally, the device performs a self- clear before write. once a byte write has been started, it will automatically time itself to completion. once a pro- gramming operation has been initiated and for the duration of t wc , a read operation will effectively be a polling opera- tion. fast byte write: the f t28c16e offers a byte write time of 200 m s maximum. this feature allows the entire device to be rewritten in 0.4 seconds. data polling: the f t28c16 provides data polling to signal the completion of a write cycle. during a write cycle, an attempted read of the data being written results in the complement of that data for i/o 7 (the other outputs are indeterminate). when the write cycle is finished, true data appears on all outputs. write protection: inadvertent writes to the device are protected against in the following ways: (a) v cc senseif v cc is below 3.8v (typical) the write function is inhibited; (b) v cc power on delayonce v cc has reached 3.8v the device will automatically time out 5 ms (typical) before allowing a byte write; and (c) write inhibitholding any one of oe low, ce high or we high inhibits byte write cycles. chip clear : the contents of the entire memory of the ft 28c16 may be set to the high state by the chip clear operation. by setting ce low and oe to 12 volts, the chip is cleared when a 10 msec low pulse is applied to we . device identification: an extra 32 bytes of eeprom memory are available to the user for device iden- tification. by raising a9 to 12 0.5v and using address locations 7e0h to 7ffh the additional bytes may be written to or read from in the same manner as the regular memory array.
f t28c16 4 notes: 1. x can be v il or v ih . 2. refer to ac programming waveforms. 3. v h = 12.0v 0.5v dc and ac operating range f t28c16-15 operating temperature (case) com. 0c - 70c ind. -40c - 85c v cc power supply 5v 10% operating modes mode ce oe we i/o read v il v il v ih d out write (2) v il v ih v il d in standby/write inhibit v ih x (1) xh i g h z write inhibit x x v ih write inhibit x v il x output disable x v ih xh i g h z chip erase v il v h (3) v il high z dc characteristics symbol parameter condition min max units i li input load current v in = 0v to v cc + 1v 10 m a i lo output leakage current v i/o = 0v to v cc 10 m a i sb1 v cc standby current cmos ce = v cc - 0.3v to v cc + 1.0v 100 m a i sb2 v cc standby current ttl ce = 2.0v to v cc + 1.0v com. 2 ma ind. 3 ma i cc v cc active current ac f = 5 mhz; i out = 0 ma ce = v il com. 30 ma ind. 45 ma v il input low voltage 0.8 v v ih input high voltage 2.0 v v ol output low voltage i ol = 2.1 ma .4 v v oh output high voltage i oh = -400 m a2 . 4v
f t28c16 5 ac read waveforms (1)(2)(3)(4) notes: 1. ce may be delayed up to t acc - t ce after the address transition without impact on t acc . 2. oe may be delayed up to t ce - t oe after the falling edge of ce without impact on t ce or by t acc - t oe after an address change without impact on t acc . 3. t df is specified from oe or ce whichever occurs first (c l = 5 pf). 4. this parameter is characterized and is not 100% tested. input test waveforms and measurement level output test load note: 1. this parameter is characterized and is not 100% tested. ac read characteristics symbol parameter f t28c16-15 units min max t acc address to output delay 150 ns t ce (1) ce to output delay 150 ns t oe (2) oe to output delay 10 70 ns t df (3)(4) ce or oe high to output float 0 50 ns t oh output hold from oe , ce or address, whichever occurred first 0 ns t r , t f < 20 ns pin capacitance f = 1 mhz, t = 25c (1) symbol typ max units conditions c in 46p fv in = 0v c out 81 2p fv out = 0v
f t28c16 6 ac write waveforms we controlled ce controlled ac write characteristics symbol parameter min typ max units t as , t oes address, oe set-up time 10 ns t ah address hold time 50 ns t wp write pulse width (we or ce ) 100 1000 ns t ds data set-up time 50 ns t dh , t oeh data, oe hold time 10 ns t cs , t ch ce to we and we to ce set-up and hold time 0 ns t wc write cycle time f t 2 8 c 1 6 0 . 5 1 . 0 m s f t28c16e 100 200 m s
f t28c16 7 notes: 1. these parameters are characterized and not 100% tested. 2. see ac characteristics. data polling waveforms chip erase waveforms t s = t h = 1 m sec (min.) t w = 10 msec (min.) v h = 12.0v 0.5v data polling characteristics (1) symbol parameter min typ max units t dh data hold time 10 ns t oeh oe hold time 10 ns t oe oe to output delay (2) ns t wr write recovery time 0 ns
f t28c16 8
f t28c16 9 notes: 1. see valid part numbers table below. 2. the 28c16 200 ns and 250 ns speed selections have been removed from valid selections table and are replaced by the faster 150 ns t aa offering. 3. the 28c16 ceramic package offerings have been removed. new designs should utilize the 28c256 ceramic offerings. ordering information (1) t acc (ns) i cc (ma) ordering code package operation range active standby 150 30 0.1 f t28c16(e)-15jc ft 28c16(e)-15pc ft 28c16(e)-15sc 32j 24p6 24s commercial (0 c to 70 c) 45 0.1 f t28c16(e)-15ji f t28c16(e)-15pi f t28c16(e)-15si 32j 24p6 24s industrial (-40 c to 85 c) valid part numbers the following table lists standard force's products that can be ordered. device numbers speed package and temperature combinations ft 2 8 c 1 6 15 jc, ji, pc, pi, sc, si f t28c16e 15 jc, ji, pc, pi, sc, si f t 2 8 c 1 6 -w die products reference section: parallel eeprom die products package type 32j 32 lead, plastic j-leaded chip carrier (plcc) 24p6 24 lead, 0.600" wide, plastic dual inline package (pdip) 24s 24 lead, 0.300" wide, plastic gull wing small outline (soic) w die options blank standard device: endurance = 10k write cycles; write time = 1 ms e high endurance option: endurance = 100k write cycles; write time = 200 m s
f t28c16 10 packaging information .045(1.14) x 45 pin no. 1 identify .025(.635) x 30 - 45 .012(.305) .008(.203) .021(.533) .013(.330) .530(13.5) .490(12.4) .030(.762) .015(3.81) .095(2.41) .060(1.52) .140(3.56) .120(3.05) .032(.813) .026(.660) .050(1.27) typ .553(14.0) .547(13.9) .595(15.1) .585(14.9) .300(7.62) ref .430(10.9) .390(9.90) at contact points .022(.559) x 45 max (3x) .453(11.5) .447(11.4) .495(12.6) .485(12.3) 1.27(32.3) 1.24(31.5) pin 1 .566(14.4) .530(13.5) .090(2.29) max .005(.127) min .065(1.65) .015(.381) .022(.559) .014(.356) 0 15 ref .630(16.0) .590(15.0) .065(1.65) .041(1.04) .690(17.5) .610(15.5) .012(.305) .008(.203) .110(2.79) .090(2.29) .161(4.09) .125(3.18) seating plane .220(5.59) max 1.100(27.94) ref .020(.508) .013(.330) .299(7.60) .291(7.39) .420(10.7) .393(9.98) .105(2.67) .092(2.34) .050(1.27) bsc .616(15.6) .598(15.2) .012(.305) .003(.076) .013(.330) .009(.229) .050(1.27) .015(.381) 8 0 ref pin 1 id 32j , 32-lead, plastic j-leaded chip carrier (plcc) dimensions in inches and (millimeters) jedec standard ms-018 aa 24p6 , 24-lead, 0.600 wide, plastic dual inline package (pdip) dimensions in inches and (millimeters) jedec standard ms-011 aa 24s , 24-lead, 0.300 wide, plastic gull wing small outline (soic) dimensions in inches and (millimeters)
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